Our company adopts internationally advanced epitaxial growth equipment to provide high-quality GaAs based and InP based quantum dot and quantum well epitaxial wafers for domestic and foreign customers, with a wavelength range of 1100-1600nm, to meet various application needs of customers.
GaAs based laser epitaxial wafer, specifications 2 ", 3“
InP based laser epitaxial wafer, specifications 2 ", 3“